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adware/ad supported applications that command you to purchase a download or some other things.The present invention relates to a method for fabricating an integrated circuit device, and more specifically, to a method for fabricating a capacitor of a semiconductor device capable of increasing a capacitor area using a side wall of a trench in a trench-type capacitor.
A dynamic random access memory (DRAM) device generally uses a capacitor as a data storage device in a semiconductor memory device. The capacitor functions to store a bit of data by accumulating an electric charge in a semiconductor substrate in which a memory cell is formed. A DRAM device uses a capacitor having a three-dimensional structure, because its integration may be scaled down to decrease a cell size, and more capacitor electrodes may be provided.
Generally, as integration of a semiconductor device is increased, a minimum dimension of a design rule is reduced. If the DRAM cell size is reduced, the capacitor may be damaged during the etching process, when a contact hole for forming a storage node is patterned. In order to increase the degree of integration of a device, a method for increasing an effective area of the capacitor has been studied. For example, methods for increasing a height of a storage node using a cylindrical-type capacitor have been proposed. However, in the case of a cylindrical-type capacitor, cell size may be increased, and a process margin may decrease due to the depth of a trench in a semiconductor substrate.
A buried plate type capacitor has been proposed in order to reduce the loss of cell area because of a depth of a trench. However, in the buried plate type capacitor, an interdiffusion between electrodes may be generated by a thermal process because of the buried plate. A nitride film formed on a substrate may be used as an etch stop layer for forming a trench having a depth, thereby reducing the interdiffusion between the electrodes. However, if a nitride
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