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This is a system utility for Windows 8/8.1. It will remove irritating Windows 8 Store icons from start menu, desktop, taskbar, and quick launch list. Vectorworks 2014 Serial Number Crack 44 Citroen Habillage Orleans Angelina Hawk’s.import { Once } from ‘typescript-fsa’

const dol: Once = Once.create()

const x: Once = Once.create()

export const y: Once = Once.create()

const z: Once = Once.create()

export const t: Once = Once.create()

export const a = Once.create()

export const u = Once.create()

export const v = Once.create()
1. Field of the Invention
The present invention relates to a nonvolatile semiconductor memory device and, more particularly, it relates to an EEPROM of a split gate type.
2. Description of the Related Art
Conventionally, an EEPROM of a split gate type has been known. In an EEPROM of this type, a floating gate and a control gate are formed on a semiconductor substrate. Drain and source regions are formed in the surface of the semiconductor substrate. The floating gate is formed between the drain and source regions with the control gate therebetween. In the EEPROM of the split gate type, in order to selectively erase the memory cell, electrons are injected from the drain region to the floating gate by the Fowler-Nordheim tunneling phenomenon. Thereby, the threshold voltage of the memory cell transistor is reduced, and the memory cell is erased.
FIG. 28 is a sectional view showing a memory cell of a conventional EEPROM of a split gate type. In FIG. 28, the reference numeral 1 designates a p-type semiconductor substrate. N-type impurity regions 2 are formed in the surface of the semiconductor substrate 1. A first insulating film 3 is formed on the semiconductor substrate 1 on which the N-type impurity region 2 has been formed.
A floating gate 4 is formed in the first insulating film 3 over the N-type impurity region 2. The floating gate 4 has an upper surface on which an n-type impurity region 5 is formed.
A first control gate 6 and a
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