Thinking Recursively With Java By Eric Roberts Pdf 16 [VERIFIED]

Thinking Recursively With Java By Eric Roberts Pdf 16

August 4, 2557 B.C. – recursive thinking. Author: Eric Roberts. Publication date: 2005. Topics: Recursion theory. Publisher: John Wiley. “In our society, recursive thinking is very rare. Most people on this planet do not own it. We live in a world full of things that have no purpose and are useless or even harmful. These are the things that create confusion and chaos. There is nothing in the world that has any purpose in itself, except for you. Everything that surrounds us is your creations, and in order to make them, you have to think about them recursively.”

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Are you looking for thinking recursively by eric roberts book? good book to make your book knowledge more complete. we try to provide the direct link to your book thinking recursively by eric roberts pdf.1. Field of the Invention
This invention relates to a process for the production of a semiconductor device using a thin film made of a refractory metal or a refractory metal nitride, and a semiconductor device produced by this process. More particularly, the invention relates to a semiconductor device of which the dielectric layer of a polycrystalline silicon electrode is made by a vacuum deposition process such as an RF sputtering process, and a process for the production thereof.
2. Description of the Prior Art
In recent years, a process has been developed for producing a semiconductor device having a polycrystalline silicon electrode on an insulator. In this process, a thin film is formed of a polycrystalline silicon film in which plural grains are grown on an insulating layer made of glass, sapphire, SiO.sub.2, etc. by the usual vapor phase process such as the CVD process, or the RF sputtering process. According to the CVD process, it is often difficult to obtain a thin film having a uniform thickness, and moreover the throughput is low. On the other hand, according to the RF sputtering process, it is difficult to obtain a high-density polycrystalline silicon film (hereinafter abbreviated to poly-Si film) of good quality which is composed of individual grains, and hence a large number of grains are present in the poly-Si film, whereby the film is not suitable for an electrode material. In the case of the RF sputtering process, the vacuum in the process chamber is maintained at a value as low as 1.times.10.sup.-6 Torr to 5.times.10.sup.-6 Torr.
On the other hand, it is well known that, when a refractory metal is heated in vacuum at a temperature of at least 400.degree. C. and at a pressure of at least 10.sup.-4 Torr, a refractory metal oxide is formed.
In a recent example of the RF sputtering process for forming a silicon oxide film by using SiH.sub.4 as the source gas, the oxide film was formed by the following process (1): The substrate on which the oxide film
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